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BSP75N 60V self-protected low-side IntellifetTM MOSFET switch
Summary
Continuous drain source voltage On-state resistance Minimum nominal load current(c) Clamping energy VDS=60V 500m
SOT223
Maximum nominal load current(a) 1.1A (VIN = 5V) 0.7A (VIN = 5V) 550mJ
Description
Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch.
S S D IN
Features
* * * * * * * * Short circuit protection with auto restart Over-voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) High continuous current rating
Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance.
Load dump protection (actively protects load) Logic level input
Ordering information
Device BSP75NTA Reel size (inches) 7 Tape width (mm) 12mm embossed Quantity per reel 1000
Device marking
BSP75N
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BSP75N
Functional block diagram
D
Over voltage protection IN Over current protection Logic Over temperature protection dV/dt limitation
Human body ESD protection
S
Applications
* * * * * Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low VDS.
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Absolute maximum ratings
Parameter Continuous drain-source voltage Drain-source voltage for short circuit protection VIN = 5V Drain-source voltage for short circuit protection VIN = 10V Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation at TA =25C (a) Power dissipation at TA =25C (c) Continuous drain current @ VIN=10V; TA=25C (a) Continuous drain current @ VIN=5V; TA=25C (a) Continuous drain current @ VIN=5V; TA=25C (c) Continuous source current (body diode) (a) Pulsed source current (body diode) (b) Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VDS(SC) VIN VIN T j, Tstg PD PD ID ID ID IS IS EAS VLoadDump VESD Limit 60 36 20 -0.2 ... +10 -0.2 ... +20 -40 to +150 -55 to +150 1.5 0.6 1.3 1.1 0.7 2.0 3.3 550 80 4000 E 40/150/56 Unit V V V V V C C W W A A A A A mJ V V
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Symbol R JA R JA R JA Limit 83 45 208 Unit C/W C/W C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for connections.
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BSP75N
Electrical characteristics (at TAMB = 25C unless otherwise stated)
Parameter Static characteristics Drain-source clamp voltage Off-state drain current Off-state drain current Input threshold voltage (*) Input current Input current Input current Static drain-source on-state resistance Static drain-source on-state resistance Current limit () Current limit() Dynamic characteristics Turn-on time (VIN to 90% ID) Turn-off time (VIN to 90% ID) Slew rate on (70 to 50% VDD) Slew rate off (50 to 70% VDD) Protection functions () Required input voltage for over temperature protection Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25C Unclamped single pulse inductive energy Tj=150C Inverse diode Source drain voltage VSD Symbol VDS(AZ) IDSS IDSS VIN(th) IIN IIN IIN RDS(on) RDS(on) ID(LIM) ID(LIM) ton toff -dVDS/dton DVDS/dtoff 0.7 1.0 Min. 60 Typ. 70 0.1 3 2.1 0.7 1.5 4 520 385 1.0 1.8 3.0 13 8 3.2 Max. 75 3 15 1.2 2.7 7 675 550 1.5 2.3 10 20 20 10 Unit V A A V mA mA mA m m A A s s V/ s V/ s Conditions ID=10mA VDS=12V, VIN=0V VDS=32V, VIN=0V VDS=VGS, ID=1mA VIN=+5V VIN=+7V VIN=+10V VIN=+5V, ID=0.7A VIN=+10V, ID=0.7A VIN=+5V, VDS>5V VIN=+10V, VDS>5V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V
1
VPROT TJT
4.5 150 175 1
V C C mJ mJ
EAS
550 200
ID(ISO)=0.7A, VDD=32V ID(ISO)=0.7A, VDD=32V VIN=0V, -ID=1.4A
1
V
NOTES: (*) The drain current is limited to a reduced value when VDS exceeds a safe level. () Protection features may operate outside spec for VIN<4.5V. () Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
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Application information
The current-limit protection circuitry is designed to de-activate at low VDS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph on page 7 'Typical Output Characteristic'). This does not compromise the products ability to self protect at low VDS. The overtemperature protection circuit trips at a minimum of 150C. So the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c) Max. ambient temperature Tamb 25C @ VIN = 5V 70C @ VIN = 5V 85C @ VIN = 5V 125C @ VIN = 5V Maximum continuous current VIN = 5V VIN = 10V 720 575 520 320 840 670 605 375
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BSP75N
Large copper area characteristics
For large copper area as described in note (a) Max. ambient temperature Tamb Maximum continuous current VIN = 5V 25C @ VIN = 5V 70C @ VIN = 5V 85C @ VIN = 5V 125C @ VIN = 5V 1140 915 825 510 VIN = 10V 1325 1060 955 590
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BSP75N
Typical characteristics
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Package outline - SOT223
Dim. A A1 b b2 C D
Millimeters Min. 0.02 0.66 2.90 0.23 6.30 Max. 1.80 0.10 0.84 3.10 0.33 6.70 -
Inches Min. 0.0008 0.026 0.114 0.009 0.248 Max. 0.071 0.004 0.033 0.122 0.013 0.264
Dim. e e1 E E1 L -
Millimeters Min. Max. 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
Inches Min. Max. 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
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Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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